Education
- Polytechnic University, Ph.D. 1994
Professional Experience
- Department of Mechanical Engineering, Stony Brook University,
1/98 - present
Publications
- Nunes, E. M., Naraghi, M. H. N., Zhang, H., and Prasad, V., 2002,
"A Volume Radiation Heat Transfer Model for Czochralski Crystal Growth
Processes," Journal of Crystal Growth, Vol. 236, pp. 596-608.
- Ma, R.-H., Zhang, H., Prasad, V., and Dudley, M. 2002, "Growth Kinetics
and Thermal Stress of Silicon Carbide", Crystal Growth and Design,
Vol. 2, pp. 213-220.
- Wang, X.Y., Zhang, H., Zheng, L.L., and Sampath, S., 2002, "An Integrated
Model for Interaction between Melt Flow and Non-Equilibrium Solidification
in Thermal Spraying," International Journal of Heat and Mass Transfer,
Vol. 45, pp. 2289-2301.
- Gunzberger, M., Ozugurlu, E., Turner, J., and Zhang, H., 2002, "Controlling
Transport Phenomena in the Czochralski Crystal Growth Process," Journal
of Crystal Growth, Vol. 234, pp. 47-62.
- Chen, Q.-S., Zhang, H., Prasad, V., Balkas, C., and Yushin, N. K.,
2001, "A System Model for Silicon Carbide Crystal Growth by PVT Method,"
Journal of Heat Transfer, Vol. 123, pp. 1098-1109.
- Zhang, H., Wang, X.Y., Zheng, L. L., and Jiang, X.Y., 2001, "Studies
of Splat Morphology and Rapid Solidification During Thermal Spraying,"
International Journal of Heat and Mass Transfer, Vol. 44, pp. 4579-4592.
- Roy, A., Zhang, H., Prasad, V., Mackintosh, B., Ouellette, M., Kalejs,
J. P., 2001, "Growth of Large Diameter Silicon Tube by EFG Technique:
Modeling and Experiment," Journal of Crystal Growth, Vol. 230, pp.
224-231.
- Chen, Q. S., Zhang, H., and Prasad, V., 2001, "Heat Transfer and
Kinetics of Bulk Growth of Silicon Carbide," Journal of Crystal Growth,
Vol. 230, pp. 239-246.
- Chen, Q. S., Zhang, H., Ma, R.H., Prasad, V., Balkas, C. M., and
Yushin, N. K., 2001, "Modeling of Transport Processes and Kinetics
of Silicon Carbide Bulk Growth," Journal of Crystal Growth, Vol. 225,
pp. 299-306.
- Wan, Y. P., Zhang, H., Jiang, X.-Y., Sampath, S. and Prasad, V.,
2001, "Role of solidification, substrate temperature and Reynolds
number on droplet spreading in thermal spray deposition: measurements
and modeling," Journal of Heat Transfer, Vol. 123, pp. 382-389.
Research Interests and History
Hui Zhang's research interests lie in the areas of computational fluid
dynamic, crystal growth, chemical reaction, materials processing, MEMS
fabrication and processes, micro-/macro-scale solidification, micro-heat
transfer, and biothermal-fluid sciences. Based on adaptive grid generation
schemes and level set methods, he has developed high-fidelity models
for phase-change and free surface problems. Models can be used for manufacturing
process evaluation and improvement, and next generation system development.
He has received the National Science Foundation CAREER Award in 1999
to develop a generalized, integrated model and virtual prototyping methodology
for semiconductor materials processing. He has also funded by NSF CTS
for micro-/macro-modeling and experiments in solidification processing
that can be used in casting, crystal growth, chemical vapor deposition,
and thermal spray coating. He is one of Co-PIs in NSF Center for Thermal
Spray Research. His current research is funded through NSF, NASA, ONR,
and industry (ASE Americas, ATMI, GTI, Sterling Semiconductor, and Ultra
Plus Technologies). He is developing programs in bio-thermal sciences,
especially, in cell-material interaction, biocompatibility, cell adhesion,
growth and freezing, and cellular heat and mass transfer. He is reviewer
for 13 Journals and NSF. Dr. Zhang is a member of the American Society
for Mechanical Engineering, the American Associate for Crystal growth,
and the Materials Research Society.
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